最新色国产精品精品视频,中文字幕日韩一区二区不卡,亚洲有码转帖,夜夜躁日日躁狠狠久久av,中国凸偷窥xxxx自由视频

+高級(jí)檢索
氧化銥薄膜的制備及其導(dǎo)電機(jī)理研究
DOI:
作者:
作者單位:

作者簡(jiǎn)介:

通訊作者:

中圖分類號(hào):

基金項(xiàng)目:

湖北省鐵電壓電材料與器件重點(diǎn)實(shí)驗(yàn)室開放基金項(xiàng)目；中央高?；究蒲袠I(yè)務(wù)費(fèi)專項(xiàng)資金資助項(xiàng)目（CUGL090221）


Study on the Preparation and Electrical Mechanism of Iridium Oxide Thin Films
Author:
Affiliation:

Fund Project:

  • 摘要
    • |
  • 圖/表
    • |
  • 訪問統(tǒng)計(jì)
    • |
  • 參考文獻(xiàn)
    • |
  • 相似文獻(xiàn)
    • |
  • 引證文獻(xiàn)
    • |
  • 資源附件
    • |
  • 文章評(píng)論
    摘要:

    采用脈沖激光沉積技術(shù)在Si(100)襯底上制備了高導(dǎo)電的IrO2薄膜，重點(diǎn)研究了退火前后其電學(xué)性能和微觀結(jié)構(gòu)的變化規(guī)律。采用X射線衍射 (XRD)、原子力顯微鏡 (AFM)、光電子能譜 (XPS)和四探針法對(duì)退火前后IrO2薄膜的結(jié)構(gòu)和電性能進(jìn)行了表征，并利用霍爾效應(yīng)研究了IrO2薄膜的導(dǎo)電機(jī)理。結(jié)果表明：IrO2薄膜在空氣中退火后，導(dǎo)電性能得到提高，其中在750 ℃退火的電阻率達(dá)到最小值37 μΩ·cm。在25~500 ℃范圍內(nèi)，IrO2薄膜的高溫電阻率隨著溫度的升高呈線性關(guān)系逐漸增大，呈現(xiàn)出類似金屬的導(dǎo)電特征。在250~400 ℃沉積的IrO2薄膜載流子的類型為p型；沉積溫度較高 (500 ℃)或在更高溫度退火處理后，IrO2薄膜載流子的類型為n型，其導(dǎo)電機(jī)理以電子導(dǎo)電為主。

    Abstract:

    IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition (PLD) technique. Emphases were given on the variation of the electrical resistivity and microstructure of IrO2 thin films before and after being annealed at air atmosphere. The composition and microstructure of IrO2 thin films were characterized by using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and the four-point probe method was used to measure their electrical resistivity. Hall measurements were used to study the electrical mechanism of IrO2 films. The results show that the annealing in air could improve the conductivity of IrO2 films, and the minimum electrical resistivity of 37 μΩ·cm is obtained at 750 °C. IrO2 films had a significant positive temperature dependence of resistivity at 25-500 °C, showing a typical metallic conduction behavior. It is found that IrO2 films deposited at the substrate temperature of 250-400 °C exhibited p-type conduction, while the conductivity type changed to n-type when the temperature increased to above 500 °C.

    參考文獻(xiàn)
    相似文獻(xiàn)
    引證文獻(xiàn)
引用本文

公衍生,周 煒,梁玉軍,譚 勁.氧化銥薄膜的制備及其導(dǎo)電機(jī)理研究[J].稀有金屬材料與工程,2011,40(10):1790~1794.[Gong Yansheng, Zhou Wei, Liang Yunjun, Tan Jin. Study on the Preparation and Electrical Mechanism of Iridium Oxide Thin Films[J]. Rare Metal Materials and Engineering,2011,40(10):1790~1794.]
DOI：[doi]

復(fù)制
文章指標(biāo)
  • 點(diǎn)擊次數(shù):
  • 下載次數(shù):
  • HTML閱讀次數(shù):
  • 引用次數(shù):
歷史
  • 收稿日期:2010-10-26
  • 最后修改日期:
  • 錄用日期:
  • 在線發(fā)布日期:
  • 出版日期: