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Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGe
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Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGe
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National Natural Science Foundation of China (50402026); Science Technology Foundation of Zhejiang Province in China (2008C31002); National Science Foundation of Shanghai (09ZR1437700)

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    摘要:

    研究了阻擋層Al2O3對應(yīng)變SiGe上HfO2 薄膜的熱穩(wěn)定性和電學(xué)可靠性的影響。高分辨透射電鏡(HRTEM)像表明，阻擋層使HfO2在700 °C溫度下退火后仍然是非晶的。散能X射線譜(EDS)分析表明，阻擋層抑制了Si原子在HfO2薄膜中的擴散。X射線光電子譜(XPS)測試表明，阻擋層抑制了界面處HfSiO和GeOx的生長。電學(xué)測試分析說明，帶有阻擋層的MIS電容的電學(xué)性能得到提高，包括60Co γ射線輻射后較高的電容密度、較低的缺陷密度、以及較小的平帶電壓漂移。

    Abstract:

    The thermal stability and the electrical reliability of HfO2 films with a blocking layer (BL) of Al2O3 on strained Si0.8Ge0.2 were studied. High-resolution transmission electron microscopy (HRTEM) indicates that BL keeps HfO2 amorphous after 700 °C annealing treatment. Energy dispersive X-ray spectroscopy (EDS) shows that BL can suppress Si diffusion in HfO2 films effectively. X-ray photoelectron spectroscopy (XPS) suggests that BL suppresses the growth of HfSiO and GeOx. Electrical measurements show that the reliability of the sample with BL is improved, including high capacitance density, low interface defect density, and small shift of flatband voltage after total-dose 60Co γ-ray irradiation.

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徐大朋,萬 里,程新紅,何大偉,宋朝瑞,俞躍輝,沈達身. Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGe[J].稀有金屬材料與工程,2011,40(8):1344~1347.[Xu Dapeng, Wan Li, Cheng Xinhong, He Dawei, Song Zhaorui, Yu Yuehui, Shen Dashen. Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGe[J]. Rare Metal Materials and Engineering,2011,40(8):1344~1347.]
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  • 收稿日期:2010-08-29
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