Abstract:Fe and He atoms were introduced into aluminum via ion implantation, and the effect of Fe-doping on the ion-implantation helium behavior in aluminum was studied by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and thermal helium desorption spectrometry (THDS). The results indicate that the doped Fe mainly exist in the form of atomic clusters in the matrix, and the behavior of surface blistering and thermal helium desorption has a close dependence on the doped-Fe and its dose. Small dose of Fe doping will result in effective resistance of surface blistering and delay of gas release, while large dose doping can deteriorate the irradiation damage, leading to flaking and even repeated flaking on the surface, and the enhancement of gas release in lower temperature range. The reasons are interpreted as following: when small dose of Fe are implanted in aluminum, second phase precipitates of high He trapping ability will form in the matrix, restraining the mobility and the growth of helium bubbles. Consequently, the microstructural evolution and gas release character are affected. However, the resistance effect will be weakened when large dose of Fe is doped in aluminum.