最新色国产精品精品视频,中文字幕日韩一区二区不卡,亚洲有码转帖,夜夜躁日日躁狠狠久久av,中国凸偷窥xxxx自由视频

+高級(jí)檢索
Zr含量對(duì)磁控濺射Mg-Zr-O薄膜微觀結(jié)構(gòu)和放電性能的影響
DOI:
作者:
作者單位:

作者簡(jiǎn)介:

通訊作者:

中圖分類號(hào):

基金項(xiàng)目:

國(guó)家重點(diǎn)基礎(chǔ)研究發(fā)展計(jì)劃(2004CB619302)；國(guó)家自然科學(xué)基金(50871083，50601020，51071119)


Effect of Zr Concentration on Microstructure and Discharge Properties of Mg-Zr-O Films Deposited by Magnetron Sputtering
Author:
Affiliation:

Fund Project:

  • 摘要
    • |
  • 圖/表
    • |
  • 訪問(wèn)統(tǒng)計(jì)
    • |
  • 參考文獻(xiàn)
    • |
  • 相似文獻(xiàn)
    • |
  • 引證文獻(xiàn)
    • |
  • 資源附件
    • |
  • 文章評(píng)論
    摘要:

    采用磁控濺射在玻璃基底上沉積Mg-Zr-O 復(fù)合介質(zhì)保護(hù)膜，研究Zr摻雜含量對(duì)薄膜微觀結(jié)構(gòu)和放電性能（著火電壓，最小維持電壓）的影響。結(jié)果發(fā)現(xiàn)，沉積的Mg-Zr-O薄膜晶粒細(xì)小，微觀結(jié)構(gòu)仍然保持MgO的面心立方NaCl型結(jié)構(gòu)，所摻雜的Zr以Zr4+形式置換固溶于MgO晶格中。當(dāng)摻雜Zr濃度為2.03at%時(shí)，薄膜具有最強(qiáng)的（200）擇優(yōu)取向和最小的表面粗糙度。適當(dāng)Zr摻雜的Mg-Zr-O薄膜和純MgO薄膜相比，其著火電壓和最小維持電壓分別降低了25和15 V。

    Abstract:

    Mg-Zr-O films for plasma display panels (PDPs) were deposited on glass substrates by magnetron sputtering method. The effects of Zr doping on both the discharge properties (firing voltage and the minimum sustaining voltage) and the microstructure of the Mg-Zr-O films were investigated. The results show that the deposited Mg-Zr-O films retain the NaCl-type structure as the pure MgO crystal. The grain of the films is very fine. The doped Zr exists in the form of Zr4+ substitution solution in MgO crystal. When the Zr concentration is about 2.03at%, the Mg-Zr-O films have the strongest (200) preferred orientation and the minimum surface roughness. The firing voltage and the minimum sustaining voltage of Mg-Zr-O protective films are reduced at most by about 25 and 15 V, respectively, compared with those of the pure MgO film.

    參考文獻(xiàn)
    相似文獻(xiàn)
    引證文獻(xiàn)
引用本文

王劍鋒,吳匯焱,宋忠孝,馬大衍,徐可為,劉純亮. Zr含量對(duì)磁控濺射Mg-Zr-O薄膜微觀結(jié)構(gòu)和放電性能的影響[J].稀有金屬材料與工程,2011,40(2):339~342.[Wang Jianfeng, Wu Huiyan, Song Zhongxiao, Ma Dayan, Xu Kewei, Liu Chunliang. Effect of Zr Concentration on Microstructure and Discharge Properties of Mg-Zr-O Films Deposited by Magnetron Sputtering[J]. Rare Metal Materials and Engineering,2011,40(2):339~342.]
DOI：[doi]

復(fù)制
文章指標(biāo)
  • 點(diǎn)擊次數(shù):
  • 下載次數(shù):
  • HTML閱讀次數(shù):
  • 引用次數(shù):
歷史
  • 收稿日期:2010-03-06
  • 最后修改日期:
  • 錄用日期:
  • 在線發(fā)布日期:
  • 出版日期: