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高電流密度作用下共晶SnBi釬料基體內(nèi)部金屬間化合物生長(zhǎng)機(jī)制
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Mechanism of Intermetallic Compound Growth in Eutectic SnBi Solder Matrix with High Current Density
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    摘要:

    研究Cu/SnBi/Cu焊點(diǎn)在電流密度分別為8×103,1×104和1.2×104 A/cm2的作用下通電80 h后釬料基體內(nèi)部金屬間化合物 (IMC)的形貌演變。結(jié)果表明:電流密度為8×103 A/cm2時(shí),在焊點(diǎn)的陽(yáng)極界面出現(xiàn)了大量的形狀不規(guī)則的IMC,而在陰極界面并未有明顯的IMC形成;當(dāng)電流密度為1×104 A/cm2時(shí),陰極界面的IMC層呈扇貝狀,有些IMC已經(jīng)在界面處脫落,而陽(yáng)極界面的IMC呈層狀,而且厚度要比陰極的?。划?dāng)電流密度為1.2×104 A/cm2時(shí),陽(yáng)極界面的IMC厚度有所增加,但是陰極界面的IMC已經(jīng)向釬料基體中進(jìn)行了擴(kuò)散遷移,使得界面變得凹凸不平。值得注意的是, 隨著電流密度的增加,在陽(yáng)極形成的Bi層的厚度明顯增加

    Abstract:

    The morphology evolution of intermetallic compounds (IMC) in Cu/SnBi/Cu solder joint after current stressing at the current density of 8×103, 1×104 and 1.2×104 A/cm2 for 80 h was investigated. Results indicate that when the current density was 8×103 A/cm2, a lot of irregular-shaped IMCs were observed at the anode interface; however, there was no obvious IMC formation at the cathode interface. When the current density was 1×104 A/cm2, scallop-shaped IMC layer was formed at the cathode interface, and some of them had spalled from the interface; while at the anode interface, the lamellar IMC was formed, and it was thinner than that at the cathode interface. When the current density was 1.2×104 A/cm2, the thickness of the IMC layer at the anode interface increased. Nevertheless, the IMC at the cathode interface had diffused and migrated towards the solder matrix, which made the cathode interface uneven. It should be noted that, with the current density increasing, the thickness of Bi layer forming at the anode side increased greatly

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何洪文,徐廣臣,郭 福.高電流密度作用下共晶SnBi釬料基體內(nèi)部金屬間化合物生長(zhǎng)機(jī)制[J].稀有金屬材料與工程,2010,39(10):1737~1740.[He Hongwen, Xu Guangchen, Guo Fu. Mechanism of Intermetallic Compound Growth in Eutectic SnBi Solder Matrix with High Current Density[J]. Rare Metal Materials and Engineering,2010,39(10):1737~1740.]
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  • 收稿日期:2009-10-27
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