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超聲波對Ta/SiO2/Si基板置換活化法化學(xué)鍍銅的影響
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Effect of Ultrasonic on Electroless Copper Deposition on Ta/SiO2/Si Substrate by Displacement Activation Method
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    摘要:

    采用置換活化法，以PdCl2/BOE/HNO3溶液對Ta/SiO2/Si基板進(jìn)行活化，然后在基板上成功實(shí)現(xiàn)化學(xué)鍍Cu薄膜。應(yīng)用場發(fā)射掃描電子顯微鏡(FESEM)、X射線衍射(XRD)等方法，研究了活化時間及超聲波對化學(xué)鍍Cu薄膜表面形貌和結(jié)構(gòu)的影響。結(jié)果表明，在化學(xué)鍍Cu過程中沒有引入超聲波時，隨著活化時間由30 s增加到150 s，Cu膜覆蓋率逐漸降低；在引入超聲波以后，隨著活化時間的增加，Cu膜覆蓋率始終很高。XRD分析表明，引入超聲波以后，Cu(111)和(200)峰的衍射強(qiáng)度明顯增加，當(dāng)活化時間為60 s時，Cu(111)和(200)峰的強(qiáng)度比I(111)/I(200)達(dá)到4.53。對具有溝槽的Ta/SiO2/Si基板進(jìn)行化學(xué)鍍Cu的結(jié)果表明，引入超聲波，可以明顯改善對溝槽的填充效果

    Abstract:

    Electroless copper deposition was performed by activation of Ta/SiO2/Si substrates using PdCl2/BOE/HNO3 displacement solution. Field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD) were employed to investigate the effects of activation time and ultrasonic on surface morphology and structure of electrolessly deposited copper films. The results show that the coverage of copper films decreased gradually with the activation time increasing from 30 s to 150 s when the plating progressed without ultrasonic, while the high coverage of copper films was held with the activation time increasing when the ultrasonic was involved. The analysis of XRD indicates that the diffraction intensity of Cu (111) and (200) orientation increased obviously after the ultrasonic was introduced. When the activation time was 60 s, the diffraction intensity ratio of Cu (111) orientation to (200) orientation (I(111)/I(200)) was 4.53. The results of electroless Cu deposition on Ta/SiO2/Si substrates with trench patterns show that the presence of ultrasonic in electroless Cu plating can remarkably improve the effect of filling in trenches

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劉殿龍,楊志剛,王 靜,張 弛.超聲波對Ta/SiO2/Si基板置換活化法化學(xué)鍍銅的影響[J].稀有金屬材料與工程,2010,39(8):1454~1459.[Liu Dianlong, Yang Zhigang, Wang Jing, Zhang Chi. Effect of Ultrasonic on Electroless Copper Deposition on Ta/SiO2/Si Substrate by Displacement Activation Method[J]. Rare Metal Materials and Engineering,2010,39(8):1454~1459.]
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  • 收稿日期:2009-08-20
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