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Bi2-xSbxTe3熱電薄膜的電化學(xué)沉積及表征
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國家自然科學(xué)基金（50872095）及國家重點(diǎn)基礎(chǔ)研究發(fā)展規(guī)劃“973”計(jì)劃（2007CB607500）資助


Electrochemical Deposition and Characterization of Bi2-xSbxTe3 Thermoelectric Thin Film
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    摘要:

    采用電化學(xué)沉積法，在ITO導(dǎo)電玻璃及鈦片上沉積Bi2-xSbxTe3熱電薄膜。采用循環(huán)伏安、SEM、XRD、EDX等技術(shù)分別對(duì)電化學(xué)沉積過程和薄膜的形貌、相結(jié)構(gòu)、組成進(jìn)行研究，并對(duì)其室溫時(shí)的熱電性能進(jìn)行測(cè)試。結(jié)果表明，在含有Bi3＋、HTeO2+和SbO+的硝酸溶液中，采用控電位沉積模式，可以實(shí)現(xiàn)鉍、銻、碲三元共沉積，得到Bi2-xSbxTe3薄膜。薄膜熱處理前用冷等靜壓處理可以提高薄膜的密實(shí)度和平整度，并有利于熱電性能的提高。

    Abstract:

    Bi2-xSbxTe3 thermoelectric films were deposited on ITO-coated glass and Ti sheet substrates by an electrochemical method. The deposition process and the morphology, phase structure and composition of the films were studied by cyclic voltammetry, SEM, XRD and EDX, respectively. The thermoelectric properties of the films were measured at room temperature. Results show that pure Bi2-xSbxTe3 films can be obtained on ITO-coated glass whereas the film grown on the Ti sheet contains a little amount of Te. The film has smoother and more compact surface with cold isostatic pressing before annealing. The electrical conductivity is greatly increased and the Seebeck coefficient almost does not change, which indicates that treating with cold isostatic pressing is an effective means to improve the thermoelectric properties of the films.

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李曉龍,蔡克峰,李 暉. Bi2-xSbxTe3熱電薄膜的電化學(xué)沉積及表征[J].稀有金屬材料與工程,2010,39(7):1302~1305.[Li Xiaolong, Cai Kefeng, Li Hui. Electrochemical Deposition and Characterization of Bi2-xSbxTe3 Thermoelectric Thin Film[J]. Rare Metal Materials and Engineering,2010,39(7):1302~1305.]
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  • 收稿日期:2009-06-04
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