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Gd1-xAlyOz:Eux梯度組合芯片的組織結(jié)構(gòu)和發(fā)光性能
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Structure and Luminescence Properties of Gd1-xAlyOz:Eux Gradational Combinatorial Material Chips
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    摘要:

    將組合材料芯片技術(shù)用于Gd1-xAlyOz:Eux熒光材料的研究。通過離子束濺射沉積和兩步熱處理技術(shù)制備Gd1-xAlyOz:Eux梯度組合材料芯片。通過X射線衍射和掃描電鏡二次電子像分析發(fā)現(xiàn)：根據(jù)釓鋁配比的不同在組合材料芯片上形成了相應(yīng)的釓鋁酸鹽晶相；Gd4Al2O9(GAM)和GdAlO3(GAP)作為Gd2O3-Al2O3中的穩(wěn)定晶體相，其單相多晶薄膜較容易形成。紫外激發(fā)發(fā)光照相記錄表明Gd1-xAlyOz:Eux可以發(fā)射明亮的紅色熒光 (Eu3+ 的5D0–7F2發(fā)射，主峰值615 nm），且對于Eu3+摻雜，GAP是最好的釓鋁酸鹽基體相。材料芯片的照相篩選結(jié)果和發(fā)射光譜、吸收光譜的分析結(jié)果一致。

    Abstract:

    The combinatorial material chip approach is an advanced method for inorganic functional materials and it can rapidly discover and optimize novel materials. In this paper, the approach was used to study flourescent material gadolinium aluminate phosphors (Gd1-xAlyOz:Eux). The Gd1-xAlyOz:Eux gradational combinatorial material chips were prepared by ion beam sputtering deposition and two-step annealing. XRD patterns and SEM second electron images indicate that different gadolinium aluminate phases were formed in the combinatorial material chips corresponding to the different Gd:Al stoichiometry. Gd4Al2O9(GAM) and GdAlO3(GAP) were stable phases in Gd2O3-Al2O3 system, and their single phase polycrystal films were easy to synthesize. Under UV light excitation (λex=254 nm), the gradational material library showed all Gd1-xAlyOz:Eux phosphors gave bright red emission (Eu3+5, D0–7F2, 615 nm) and the best matrix for Eu3+ dopant should be GdAlO3. This library screening result was also verified by photoluminescence spectra and absorption spectra.

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羅 嵐,熊志華,周耐根,周 浪. Gd1-xAlyOz:Eux梯度組合芯片的組織結(jié)構(gòu)和發(fā)光性能[J].稀有金屬材料與工程,2010,39(7):1260~1264.[Luo Lan, Xiong Zhihua, Zhou Naigen, Zhou Lang. Structure and Luminescence Properties of Gd1-xAlyOz:Eux Gradational Combinatorial Material Chips[J]. Rare Metal Materials and Engineering,2010,39(7):1260~1264.]
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  • 收稿日期:2009-06-11
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