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Ta-N/Zr diffusion barrier was grown on the Si (100) substrates under various substrate temperatures in a RF magnetron sputtering system. Investigated the effect of thin Zr layer insertion on the Ta-N diffusion barrier performance of Ta-N film in Cu metallization has been investigated. The results reveal that the microstructure of Ta-N films is amorphous phase at different substrate temperatures with a higher barrier breakdown temperature of about 100 ℃ than Ta-N film, which can effectively prevent the diffusion of Cu after annealing at 800 ℃ due to the production of Zr-Si layer after annealing at high temperatures