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射頻磁控濺射ZrW2O8薄膜的高溫退火研究
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國家自然科學(xué)基金項(xiàng)目(50372027);江蘇省高校自然科學(xué)重大基礎(chǔ)研究項(xiàng)目(06KJA43010);江蘇大學(xué)博士創(chuàng)新基金


Effects of Post-Deposition Annealing on ZrW2O8 Thin Films by Radio Frequency Magnetron Sputtering
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    摘要:

    采用ZrW2O8陶瓷靶材,以射頻磁控濺射法在不同基片上沉積制備ZrW2O8薄膜。利用X射線衍射(XRD)儀和掃描電子顯微鏡(SEM)研究靶材性能和退火溫度、氣氛以及基片對薄膜的相組成、表面形貌的影響。結(jié)果表明:ZrW2O8靶材具有較高的純度和致密度,磁控濺射制備的薄膜為非晶態(tài),在730 ℃左右通氧條件下退火后得到擇優(yōu)生長的ZrW2O8薄膜;在750 ℃左右退火得到三方相ZrW2O8薄膜;在1200 ℃密閉的條件下淬火得到立方相ZrW2O8薄膜;在15到700 ℃溫度區(qū)間內(nèi),制備的立方相ZrW2O8薄膜負(fù)熱

    Abstract:

    The ZrW2O8 thin film of negative thermal expansion (NTE), as a novel functional material, has various potential applications in optics, microelectronics and micro-machine. The ZrW2O8 thin films were deposited on different substrates by RF magnetron sputtering with pure ZrW2O8 ceramic as target. The performance of target and the effects of post-deposition annealing temperature, atmosphere and substrate on the microstructure and morphology of the ZrW2O8 thin films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicate that the target is compact and composed of pure ZrW2O8. The as-deposited ZrW2O8 film shows an amorphous phase. The ZrW2O8 film with preferred orientation can be prepared in oxygen atmosphere by annealing at 730 ℃, the trigonal ZrW2O8 film can be prepared by annealing at 750 ℃, and the cubic ZrW2O8 film can be prepared in a sealed cell at 1200 ℃, and the negative thermal expansion coefficient of the resulting cubic ZrW2O8 film is –14.47×10-6 K-1 in the temperature range from 15 ℃ to 700 ℃. With the increase of annealing temperature, some holes and deficiencies appear in the surface of films

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劉紅飛,張志萍,程曉農(nóng).射頻磁控濺射ZrW2O8薄膜的高溫退火研究[J].稀有金屬材料與工程,2009,38(7):1284~1287.[Liu Hongfei, Zhang Zhiping, Cheng Xiaonong. Effects of Post-Deposition Annealing on ZrW2O8 Thin Films by Radio Frequency Magnetron Sputtering[J]. Rare Metal Materials and Engineering,2009,38(7):1284~1287.]
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  • 收稿日期:2008-06-24
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