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Vanadium oxide thin films were deposited by reactive direct current facing targets magnetron sputtering, and then processed in oxygen ambience to fabricate phase transition vanadium oxide thin films. X-Ray Photoelectron Spectroscopy(XPS), X-Ray Diffraction(XRD) technique and Atom Force Microscope(AFM) were employed to study and analyze the phase composition, structure of crystalline units of the thin films and surface morphology. The resistance-temperature property was also measured. The results show that the phase composition of as-deposited thin film changed from V2O3 and VO to VO2 when annealing at 300 ℃; the grains on surface are incompact and it is useful for oxygen infiltration to oxidate VOx thin films. The structure of VO2 oxidated from V2O3 and VO is monoclinic rutile structure processed between 300~320 ℃, the magnitude of metal-semiconductor transition increases to 2 with increasing of VO2 in thin films. All the results reveal that metal-semiconductor transition vanadium oxide thin films can be obtained by reactive direct current facing targets magnetron sputtering at low thermal processed temperature.