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硫分壓對光吸收層CuInS2薄膜性能的影響
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“十一五”國家高技術研究開發(fā)計劃 (“863”計劃) 資助項目(2006AA03Z237)


Effect of Sulfur Partial Pressure on Properties of CuInS2 Absorber Films
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    摘要:

    在不同硫分壓r (r=Sn/[N2+Sn])下，采用Cu-In預制膜硫化法制備了CuInS2薄膜。用掃描電子顯微鏡、X射線衍射儀、霍爾測試儀、紫外-可見光分光光度計對薄膜的表面形貌、結構、電學、光學性能進行了表征分析。結果表明：隨著r增加，薄膜的結晶質量提高，當r＝1/2時，晶粒大小如一，粒度保持在1 μm左右，沿[112]晶向擇優(yōu)生長，載流子濃度為5.6×1016 cm-3，光學帶隙在1.53 eV左右

    Abstract:

    CuInS2 (CIS) films were prepared by electrodepositing-sulfurization at the different partial pressures of sulfur r(r=Sn/[N2+Sn]). Their surface morphologies, crystalline structure, electrical and optical properties were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall system and ultraviolet-visible (UV-VIS) spectraphotometers, respectively. The results show that the crystalline quality is improved with increasing of r. It is found that the CuInS2 film sulfurized at r=1/2 with the fairly large grain size of about 1 μm has (112) preferred orientation, the carrier concentration is 5.6×1016 cm-3, the optical band gap is about 1.53 eV

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閻有花,劉迎春,方 玲,盧志超,周少雄,李正邦.硫分壓對光吸收層CuInS2薄膜性能的影響[J].稀有金屬材料與工程,2009,38(5):838~841.[Yan Youhua, Liu Yingchun, Fang Ling, Lu Zhichao, Zhou Shaoxiong, Li Zhengbang. Effect of Sulfur Partial Pressure on Properties of CuInS2 Absorber Films[J]. Rare Metal Materials and Engineering,2009,38(5):838~841.]
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  • 收稿日期:2008-05-25
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