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直流等離子體CVD金剛石薄膜微觀結(jié)構(gòu)分析
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TG174.442

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南京航空航天大學(xué)博士生創(chuàng)新基金:江蘇省研究生創(chuàng)新基金(BCXJ06-11);國家自然科學(xué)基金(50275076)


Microstructure and Growth Mechanism of Diamond Film Prepared by DC-Plasma CVD
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    摘要:

    采用直流等離子體CVD法制備了金剛石膜,利用X射線衍射、光學(xué)顯微鏡、掃描電鏡、激光拉曼光譜等技術(shù)研究了金剛石膜的微觀組織,晶粒擇優(yōu)取向生長過程。結(jié)果表明:開始形核時(shí),晶粒隨機(jī)無擇優(yōu)生長;對(duì)基體表面氫刻蝕預(yù)處理,有利于晶胚形核長大。甲烷濃度對(duì)金剛石膜晶粒擇優(yōu)取向生長有重要影響:甲烷濃度較低時(shí),金剛石膜(100)面擇優(yōu)生長,形成以(111)為主的八面體晶體,并且可以制取中心和邊緣均勻、高質(zhì)量光學(xué)級(jí)自支撐金剛石膜,但生長速率慢,效率低。同時(shí)也發(fā)現(xiàn)金剛石膜存在空位、孔洞等缺陷。

    Abstract:

    Diamond film wafers were prepared by high power DC-plasma jet CVD method. The microstrures and the orientation of grain growth for the diamond film were studied by XRD, OM. SEM and Raman spectroscop. The results showed that grains grew in random orientation. Atom hydrogen etching benefited the nucleation and growth of crystal embryo. Methane concentration has important influence on the preferentially orientated growth of the grains. Upon a low methane concentration, (111) facet of the diamond film grew in preferential orientation, and an octahedron crystal was formed. Finally the optical diamond film with uniform center and edge, high quality was prepared. Adopting high power DC-plasma jet CVD method, the speed of growth of diamond was lower. Meantime, the vacancies and vacancy clusters were also found.

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李多生 左敦穩(wěn) 陳榮發(fā) 相炳坤 趙禮剛 王珉.直流等離子體CVD金剛石薄膜微觀結(jié)構(gòu)分析[J].稀有金屬材料與工程,2007,36(4):648~651.[Li Duosheng, Zuo Dunwen, Chen Rongfa, Xiang Bingkun, Zhao Ligang, Wang Min. Microstructure and Growth Mechanism of Diamond Film Prepared by DC-Plasma CVD[J]. Rare Metal Materials and Engineering,2007,36(4):648~651.]
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  • 最后修改日期:2006-07-19
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