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MOCVD生長GaN力學(xué)性能研究
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TN304.23

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國家“863”項目資助（2004AA311040）


Study on Mechanical Properties of GaN Epitaxy Films Grown on Sapphire by MOCVD
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    摘要:

    采用MOCVD技術(shù)在藍寶石襯底（0001）面上生長了GaN外延膜，利用原子力顯微鏡AFM、掃描電鏡SEM分析了薄膜表面形貌，利用納米壓痕儀和UMT試驗機考察了GaN膜的硬度、臨界載荷以及摩擦學(xué)性能等。結(jié)果表明，薄膜以二維模式均勻生長，表面平整，硬度達22．1MPa，彈性模量為299．5GPa，與襯底結(jié)合緊密，臨界載荷達1．6N，與GCr15鋼球?qū)δr摩擦系數(shù)僅為0．13，與Si3N4陶瓷球摩擦?xí)r膜很快就磨穿。

    Abstract:

    GaN epitaxy films were grown on (0001) oriented sapphire substrate by metal-organic vapor deposition(MOCVD). AFM and SEM were used to analyze the surface morphology of GaN films. Hardness and critical load of GaN films were measured by an nano-indentation tester, friction coefficient by reciprocating UMT-2MT tribometer. It is found that the surface of GaN film is smooth and the epitaxial growth mechanism is in two-dimension mode, GaN epitaxy films also belong to ultra-hardness materials, whose hardness is 22.1 MPa and elastic modulus is 299.5 GPa. Adhesion strength of epitaxial GaN to sapphire is high, and critical load reaches 1.6 N. Friction coefficient against GCr15 ball is steadily close to 0.13, while GaN films turns to be broken rapidly by using Si3N4 ceramic ball as counterpart.

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魏同波 王軍喜 李晉閩 劉酷 段瑞飛. MOCVD生長GaN力學(xué)性能研究[J].稀有金屬材料與工程,2007,36(3):416~419.[Wei Tongbo, Wang Junxi, Li Jinmin, Liu Zhe, Duan Ruifei. Study on Mechanical Properties of GaN Epitaxy Films Grown on Sapphire by MOCVD[J]. Rare Metal Materials and Engineering,2007,36(3):416~419.]
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  • 最后修改日期:2006-01-19
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