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高擇優(yōu)取向TiB2電沉積層的制備及其表征
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TQ134.11 TF111.52

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國(guó)家自然科學(xué)基金資助項(xiàng)目(50204006)


Preparation and Characterization of Highly Preferred Orientation TiB2 Coatings
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    摘要:

    在KF-KCl體系中通過(guò)電沉積方法(直流電沉積CCP和周期斷開(kāi)電流電沉積PIC),以K2TiF6和KBF4作為活性物質(zhì)在石墨基體上制備了高擇優(yōu)取向的TiB2鍍層。用X射線衍射(XRD)研究了陰極電流密度對(duì)TiB2鍍層晶粒尺寸、擇優(yōu)取向、微觀應(yīng)力及晶格常數(shù)的影響。結(jié)果表明,晶粒尺寸隨電流密度增加而變小,這是過(guò)電位增加提高了形核速率所致,相對(duì)CCP而言,PIC制備的TiB2鍍層具有更小的晶粒,這是因?yàn)镻IC通過(guò)增加擴(kuò)散層內(nèi)離子的濃度減弱了濃差極化,提高了形核率所致;本實(shí)驗(yàn)條件下制備的TiB2鍍層擇優(yōu)取向均為(001)面,這可用二維晶核理論來(lái)解釋;無(wú)論CCP還是PIC,制備的TiB2鍍層的晶格常數(shù)均和理論值有所偏差,這是鍍層中存在的應(yīng)力引起的;另外,還通過(guò)熱力學(xué)預(yù)測(cè)、XRD和界面能譜(EDS)證實(shí)了鍍層和基體間的結(jié)合為物理結(jié)合,界面處的裂紋可能是鍍層和基體間熱膨脹系數(shù)存在差異造成的。

    Abstract:

    Highly preferred orientation TiB2 coatings were obtained by electrochemical techniques of continuous current plating (CCP) and pulse current plating (PCP) in fluoride-chloride electrolytes (KF-KCl) containing K2TiF6 and KBF4 as the electrochemically-active components. The effects of cathode current density on the crystal size, preferred orientation, micro stresses and lattice constants were studied by X-ray diffraction (XRD). The results indicate that the crystal size gets smaller with the increase of the cathode current density due to the increase of the nucleation rate at the over-potential. Compared with the CCP, the crystal size of TiB2 coatings prepared by PIC is finer because PIC can weaken the concentration polarization and increase the nucleation rate by increasing the ion concentration of diffusion layer. The preferred orientation of TiB2 coatings prepared above is (001) plane at the experimental conditions, which can be well explained by the two-dimension crystal nuclei theory. The lattice constant of TiB2 coatings deviates from the theoretical value due to the stress in coatings. Besides, it is confirmed that the binding between TiB2 coatings and graphite substrates is the physical binding from the results of thermodynamic predictions, XRD and EDS (Energy Dispersive X-ray Spectrum). The existence of some cracks at the interface may be attributed to the difference between the thermal expansion coefficients of TiB2 and graphite.

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李軍 李冰.高擇優(yōu)取向TiB2電沉積層的制備及其表征[J].稀有金屬材料與工程,2006,35(5):832~835.[Li Jun, Li Bing. Preparation and Characterization of Highly Preferred Orientation TiB2 Coatings[J]. Rare Metal Materials and Engineering,2006,35(5):832~835.]
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  • 收稿日期:2005-01-25
  • 最后修改日期:2005-06-13
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