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摻V和Ag的TiAl合金中缺陷和電子密度的正電子湮沒(méi)研究
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TG146.2

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Supported by the National Natural Seience Foundations of China （50361002） and the Natural Science Foundations of Guangxi （0249005）


Study of Defects and Electron Densities in TiAl Alloy Doped with V and Ag by Positron Annihilation
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    摘要:

    測(cè)量了Ti50Al50，Ti50Al48V2，Ti50Al48Ag2合金和充分退火的Ti，Al，Ag，V金屬的正電子壽命譜，利用正電子壽命參數(shù)分別計(jì)算了合金基體和缺陷態(tài)的自由電子密度。TiAl合金的脆性與其基體和晶界缺陷處的自由電子密度較低有關(guān)。在富Ti的TiAl合金中加入V，V原子比Al和Ti原子能提供較多的自由電子參與形成金屬鍵，因而提高了合金基體和晶界缺陷處的自由電子密度；在TiAl合金中加入Ag也有類(lèi)似的效應(yīng)。在TiAl合金中加入V和Ag，有利于提高合金的韌性。

    Abstract:

    Positron lifetime spectra of Ti50Al50, Ti50Al48V2, Ti50Al48Ag2 alloys and annealed Ti, Al, Ag, V metals were measured. The electron densities in the bulk and defects of the alloys were calculated by positron lifetime parameters. The poor ductility of binary TiAI alloy is related to low free electron densities in the bulk and the grain boundaries of the alloy. When V are added into Ti-rich TiAI alloy, V atoms will provide more free electrons than both Al and Ti atoms to participate in metallic bonds, thus increasing the electron densities in the bulk and the grain boundary simultaneously. Ag additions appear to have an effect similar to V additions. Both V and Ag are benefit elements in enhancing the ductility of TiAl alloys.

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鄧文 ?，摤?周銀娥 黃宇陽(yáng) 曹名洲 熊良鉞.摻V和Ag的TiAl合金中缺陷和電子密度的正電子湮沒(méi)研究[J].稀有金屬材料與工程,2006,35(3):348~351.[Deng Wen, Zhu Yingying, Zhou Yine, Huang Yuyang, Cao Mingzhou, Xiong Liangyue. Study of Defects and Electron Densities in TiAl Alloy Doped with V and Ag by Positron Annihilation[J]. Rare Metal Materials and Engineering,2006,35(3):348~351.]
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  • 收稿日期:2004-07-05
  • 最后修改日期:2004-11-17
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