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TiN／Ti／SiO2／Si基板的分電極酸性化學(xué)鍍銅
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TG153.1

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Electroless Acid-Based Plating Cu on TiNi/Ti/SiO2/Si Substrate
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    摘要:

    討論了對(duì)TiNi／Ti／SiO2／Si基板在HF＋CuSO4中采用分離雙電極方法的化學(xué)酸性鍍銅。Si基板和TiNUTi／SiO2／Si基板分別作為化學(xué)鍍的陽極和陰極，在開路條件下進(jìn)行化學(xué)鍍。最佳化學(xué)鍍反應(yīng)條件為電極相距0．5mm，[HF]和[CuSO4]大于8％（質(zhì)量分?jǐn)?shù)）和0．045mol／L。最后得到覆蓋率高、晶粒大小均一、結(jié)構(gòu)致密、具有〈111〉擇優(yōu)取向的Cu膜，且Cu膜中不含Cu2O，降低了電阻率。

    Abstract:

    Plating Cu on TiNi/Ti/SiO2/Si substrate in the HF+CuSO4 solution by separated electrodes chemical method was discussed in this essay. Si and TiNi/Ti/SiO2/Si are used as the anode and cathode. The best condition for the plating is as followings: distance for the electrodes is 0.5 mm, [HF] and [CuSO4] more than 8 wt% and 0.045 mol/L. Finally uniform deposited Cu film with complete coverage, few voids and preference of <111> is obtained. Also deposited Cu film does not contain Cu2O, which reduces the resistivity.

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溫錦生 劉超 鐘聲 楊志剛. TiN／Ti／SiO2／Si基板的分電極酸性化學(xué)鍍銅[J].稀有金屬材料與工程,2006,35(2):324~328.[Wen Jinsheng, Liu Chao, Zhong Sheng, Yang Zhigang. Electroless Acid-Based Plating Cu on TiNi/Ti/SiO2/Si Substrate[J]. Rare Metal Materials and Engineering,2006,35(2):324~328.]
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  • 收稿日期:2004-11-01
  • 最后修改日期:2004-11-01
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