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氧流量對(duì)銦錫氧化物薄膜光電性能的影響
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TG146.4

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華中科技大學(xué)優(yōu)秀博士論文基金(2005);國(guó)防預(yù)研跨行業(yè)基金項(xiàng)目(51410020401JW0504)


Effects of Oxygen Flow on the Photoelectricity Properties of In2O3-SnO2 Films
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    摘要:

    采用射頻磁控濺射法,在不同氧流量(0~10sccm)的條件下沉積了銦錫氧化物(In2O3-SnO2)透明導(dǎo)電薄膜。紫外分光光度計(jì)測(cè)試薄膜的透射率,四點(diǎn)探針測(cè)試薄膜的方阻,橢偏儀測(cè)試薄膜的復(fù)折射率和薄膜厚度,XPS測(cè)試ITO薄膜的成分和電子結(jié)構(gòu)。結(jié)果表明:薄膜的沉積速率和折射率與氧流量有關(guān),薄膜厚度為60nm,氧流量在9sccm時(shí),透射率超過(guò)80%(波長(zhǎng)λ=400nm~700nm,包括玻璃基體),退火后透射率、方阻明顯改善。XPS分析表明,薄膜中的亞氧化物的存在降低了薄膜的光電性能,控制氧流量可減少亞氧化物。

    Abstract:

    Indium tin oxide films(In2O3-SnO2)were deposited onto glass at different oxygen flows by R.F. magnetron sputtering method. Transmittance in visible light and an energy band gap were measured by ultraviolet spectrophotometer . square resistance was measured by four-point probe. The thickness and complex refractive index of films were measured by spectroscopic ellipsomtry. The component of the ITO films was studied by XPS. The study indicates that the deposited ratio and refractive indexes of films are related to the O2 flow rate, The transmittance in visible light is beyond 80% (including glass substrate) with the film thickness 60nm and 9sccm oxygen flux. The transmittance and square resistance can be improved by hot treatment. XPS investigation shows that the photoelectricity properties can be deteriorated by the sub-oxides, which can be reduced by oxygen flux.

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李世濤 喬學(xué)亮 陳建國(guó).氧流量對(duì)銦錫氧化物薄膜光電性能的影響[J].稀有金屬材料與工程,2006,35(1):138~141.[Li Shitao, Qiao Xueliang, Chen Jianguo. Effects of Oxygen Flow on the Photoelectricity Properties of In2O3-SnO2 Films[J]. Rare Metal Materials and Engineering,2006,35(1):138~141.]
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  • 收稿日期:2004-10-12
  • 最后修改日期:2005-02-20
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