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SiO_3~(2-)對TiAl合金微弧氧化陶瓷層的影響
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TG174.4

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The Effect of SiO_3~(2-) on Micro-Arc Oxidization Ceramic Layer of TiAl Alloy
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    摘要:

    采用自行研制的脈沖微弧氧化設(shè)備,在TiAl合金表面制備了微弧氧化陶瓷層。測定了TiAl合金微弧氧化陶瓷層在高溫循環(huán)氧化條件下的氧化動力學(xué)曲線。研究了在微弧氧化處理溶液中加入SiO32-對陶瓷層性能的影響。實(shí)驗(yàn)結(jié)果顯示:經(jīng)過微弧氧化處理后試樣的高溫氧化動力學(xué)曲線大致呈拋物線規(guī)律,其表面的陶瓷氧化膜具有保護(hù)性;在微弧氧化處理溶液中加入SiO32-后,微弧氧化處理的TiAl合金的使用溫度可提高到1273K。利用掃描電子顯微鏡(SEM)和X射線衍射儀(XRD)對陶瓷層的顯微結(jié)構(gòu)和物相組成進(jìn)行分析,發(fā)現(xiàn)其物相組成為含量約占80%的Al2TiO5,11%的TiO2以及9%的SiO2。這表明SiO2能有效抑制Al2TiO5在高溫下的分解,從而大幅提高TiAl合金的抗高溫氧化性。

    Abstract:

    The micro-arc oxidization is an efficient and pollution-free technique of surface processing and can form in situ a ceramic layer on the surface of nonferrous metal. In this paper, the micro-arc oxidization ceramic layer was formed on the surface of TiAl alloy by using a self-designing pulse power supply equipment of micro-arc oxidization. The oxidation dynamics of the ceramic layer on the surface of TiAl alloy was studied in the cycle high temperature condition and the experimental results show that the oxidation dynamics curve of TiAl alloy micro-arc oxidization ceramic layer submitted a parabolic function, which indicates that the ceramic layer can protect the TiAl alloy. Moreover, the effect of SiO32- on the characteristics of the ceramic layer was also studied, the results show that the working temperature with a micro-arc oxidization ceramic layer can be increased to 1273 K after adding SiO32- in the solution of the micro-arc oxidization. Analyzing by SEM and XRD test, the TiAl alloy ceramic layer contained 80 percent Al2TiO5, 11 percent TiO2 and 9 percent SiO2, which indicates that the addition of SiO2 can effectively restrain the decomposition of Al2TiO5 at high temperature and thus significantly increase the anti-oxidation of the TiAl alloy.

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郝建民,介萬奇,陳宏,葉育德. SiO_3~(2-)對TiAl合金微弧氧化陶瓷層的影響[J].稀有金屬材料與工程,2005,34(9).[Hao Jianmin, Jie Wanqi, Chen Hong, Ye Yude. The Effect of SiO_3~(2-) on Micro-Arc Oxidization Ceramic Layer of TiAl Alloy[J]. Rare Metal Materials and Engineering,2005,34(9).]
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