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Ga在SiO2-Si復(fù)合結(jié)構(gòu)中的熱分布研究
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TN305.4

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國家自然科學(xué)基金資助項(xiàng)目(69976019)


Investigation of Thermal Distribution of Ga in SiO2/Si Structure
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    摘要:

    用H2和Ga2O3的高溫反應(yīng)形成元素Ga的恒定表面源，通過SiO2-Si復(fù)合結(jié)構(gòu)實(shí)現(xiàn)了Ga在Si中的高均勻性摻雜；利用二次離子質(zhì)譜分析(SIMS)、擴(kuò)展電阻(SRP)、四探針測試等方法，對P型雜質(zhì)Ga在SiO2薄膜、SiO2-Si兩固相接觸的內(nèi)界面、近Si表面的熱分布進(jìn)行分析；揭示出開管方式擴(kuò)散Ga的實(shí)質(zhì)是由SiO2薄膜對Ga原子的快速輸運(yùn)及其在SiO2-Si內(nèi)界面分凝效應(yīng)兩者統(tǒng)一的必然結(jié)果；并對該過程Ga雜質(zhì)濃度分布機(jī)理進(jìn)行了分析和討論。

    Abstract:

    The high temperature reaction between H2 and Ga2O3 is employed to obtain constant surface source of Ga, then high uniformity doping of Ga in Si is realized through SiO2-Si compound structure. By characterizing means of SIMS, SRP and four-point probe meter, the thermal distribution of P-type dopant Ga in SiO2 films, at the internal surface of SiO2-Si and near Si surface is analyzed respectively. The essence of open-tube Ga diffusion is revealed, which is closely related with both the rapid transportation of Ga through SiO2 film and the segregation effect of it at the internal surface of SiO2-Si. The mechanism of Ga concentration distribution is discussed accordingly.

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裴素華 孫海波 修顯武 張曉華 江玉清. Ga在SiO2-Si復(fù)合結(jié)構(gòu)中的熱分布研究[J].稀有金屬材料與工程,2005,34(2):275~278.[Pei Suhua, Sun Haibo, Xiu Xianwu, Zhang Xiaohua, Jiang Yuqing. Investigation of Thermal Distribution of Ga in SiO2/Si Structure[J]. Rare Metal Materials and Engineering,2005,34(2):275~278.]
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  • 最后修改日期:2003-08-11
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