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氨化硅基Ga2O3／Al2O3制備GaN薄膜的發(fā)光特性研究
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TN304

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國家自然科學(xué)基金重大研究計劃(90201025)和國家自然科學(xué)基金(60071006)資助項目


Photoluminescence Study of GaN Film Grown by Ammoniating Ga2O3/Al2O3 Deposited on Si(111) Substrate
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    摘要:

    研究了Ga2O3／Al2O3膜氫化反應(yīng)自集結(jié)制備GaN薄膜的光致發(fā)光特性，討論了發(fā)光機制以及生長條件對其光致發(fā)光特性的影響。樣品的熒光光譜在347nm有一強發(fā)光峰，在412nm有一弱發(fā)光峰，這兩個峰的強度都隨著氨化溫度的升高和氨化時間的增長而增強，但峰的位置保持不變。我們認為347nm的峰是GaN的帶邊發(fā)光峰由于薄膜中晶粒尺寸的減小而藍移造成的，而412nm的發(fā)光峰則來源于導(dǎo)帶到雜質(zhì)受主能級的輻射復(fù)合。

    Abstract:

    Photoluminescence(PL) of Gallium nitride (GaN) films grown by ammoniating Ga2O3/Al2O3 films deposited on silicon (111) by rf magnetron sputtering has been studied. The mechanism and the influence of growth condition on the photoluminescence is also studied. There are two emission peaks: a strong one at 347 nm, and a weak one at 412 nm. Increasing the ammoniating temperature and lengthening the ammoniating time, the intensities of both two peaks increase, but the in locations do not move. The peak at 347 nm is considered to be the blue-shift, which was caused by micro- size of GaN grains, of the band-edge emission peak of GaN. The emission peak at 412 nm is attributed to radiant combination from conduct band to the energy level of acceptor impurity.

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魏芹芹 薛成山 孫振翠 曹文田 莊惠照 董志華.氨化硅基Ga2O3／Al2O3制備GaN薄膜的發(fā)光特性研究[J].稀有金屬材料與工程,2005,34(1):166~168.[Wei Qinqin, Xue Chengshan, Sun Zhencui, Cao Wentian, Zhuang Huizhao, Dong Zhihua. Photoluminescence Study of GaN Film Grown by Ammoniating Ga2O3/Al2O3 Deposited on Si(111) Substrate[J]. Rare Metal Materials and Engineering,2005,34(1):166~168.]
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  • 最后修改日期:2003-08-18
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