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Nd2O3對(duì)氧化鋅壓敏閥片壓敏電位梯度與顯微組織的影響
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Influence of Nd2O3 on Voltage and Microstructure of ZnO Varistor Materials
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    摘要:

    研究了微量Nd2O3添加劑對(duì)氧化鋅壓敏閥片的壓敏電位梯度的影響，并對(duì)其微觀組織進(jìn)行了分析研究，從理論上探討了Nd2O3影響氧化鋅壓敏閥片壓敏電位梯度與組織的機(jī)理。研究結(jié)果表明，在0m01％～0．04mol％成分范圍內(nèi)，隨著Nd2O3含量的增加，氧化鋅壓敏閥片的壓敏電位梯度明顯提高；當(dāng)Nd2O3含量超過(guò)0．04mol%時(shí)，隨其含量的增加，氧化鋅壓敏閥片的壓敏電位梯度又呈降低趨勢(shì)。其原因是Nd2O3加入到氧化鋅壓敏閥片中，使晶粒尺寸減小所致。

    Abstract:

    The effect of Nd2O3 on voltage and microstructure of ZnO varistor was studied, and a theoretical analysis of the mechanism of the effect was conducted. The results show that the voltage of ZnO varistor increases with the increase of Nd2O3 content in the range of 0 mol%~0.04 mol%. But when the content of Nd2O3 is more than 0.04 mol%, the voltage of ZnO varistor decreases with the increase of the content. The microstructure analysis indicates that the minimal additive exists in ZnO grain boundary in the form of a new compound and hinders the movement of grain boundary, which reduces the size of ZnO grain size and makes the grain more uniform, and as a result, Nd2O3 improve the voltage of the varistor greatly.

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嚴(yán)群 陳家釗 涂銘旌. Nd2O3對(duì)氧化鋅壓敏閥片壓敏電位梯度與顯微組織的影響[J].稀有金屬材料與工程,2005,34(1):154~157.[Yan Qun, Chen Jiazhao, Tu Mingjing. Influence of Nd2O3 on Voltage and Microstructure of ZnO Varistor Materials[J]. Rare Metal Materials and Engineering,2005,34(1):154~157.]
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  • 最后修改日期:2003-05-12
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