最新色国产精品精品视频,中文字幕日韩一区二区不卡,亚洲有码转帖,夜夜躁日日躁狠狠久久av,中国凸偷窥xxxx自由视频

+高級檢索
退火處理對SnO2：Sb薄膜結(jié)構(gòu)和光致發(fā)光性質(zhì)的影響
DOI:
作者:
作者單位:

作者簡介:

通訊作者:

中圖分類號:

TN304.21

基金項目:

教育部科學(xué)技術(shù)研究重點項目（02165）;博士點基金資助項目（20020422056）


Effect of Annealing on Structure and Photoluminescence Characters of SnO2:Sb Thin Films
Author:
Affiliation:

Fund Project:

  • 摘要
    • |
  • 圖/表
    • |
  • 訪問統(tǒng)計
    • |
  • 參考文獻(xiàn)
    • |
  • 相似文獻(xiàn)
    • |
  • 引證文獻(xiàn)
    • |
  • 資源附件
    • |
  • 文章評論
    摘要:

    用射頻磁控濺射法在玻璃襯底上制備出SnO2：Sb薄膜，研究了不同摻雜和退火對薄膜結(jié)構(gòu)的影響。制備薄膜是具有純氧化錫四方金紅石結(jié)構(gòu)的多晶膜薄，晶粒生長的擇優(yōu)取向為（110）。室溫下光致發(fā)光測量首次觀測到392nm附近存在紫外-紫光發(fā)射，并對SnO2：Sb的光致發(fā)光機(jī)制進(jìn)行了探索性研究。

    Abstract:

    The SnO2:Sb films was prepared on glass substrates by rf magnetron sputtering method. The effect of different doping content and annealing on structure of the thin films were investigated. Result show that the prepared samples are polycrystalline thin films with rutile structure of pure SnO2 and have orientation of (110) direction. The crystallization of the samples changes with the different doping content and annealing conditions. The photoluminescence of the samples was measured at room temperature. For the first time, a UV-violet luminescence peak near 392 nm was observed, and the luminescence mechanism was also tentatively investigated.

    參考文獻(xiàn)
    相似文獻(xiàn)
    引證文獻(xiàn)
引用本文

王玉恒 馬瑾 計峰 余旭滸 馬洪磊.退火處理對SnO2：Sb薄膜結(jié)構(gòu)和光致發(fā)光性質(zhì)的影響[J].稀有金屬材料與工程,2005,34(11):1747~1750.[Wang Yuheng, Ma Jin, Ji Feng, Yu Xuhu, Ma Honglei. Effect of Annealing on Structure and Photoluminescence Characters of SnO2:Sb Thin Films[J]. Rare Metal Materials and Engineering,2005,34(11):1747~1750.]
DOI：[doi]

復(fù)制
文章指標(biāo)
  • 點擊次數(shù):
  • 下載次數(shù):
  • HTML閱讀次數(shù):
  • 引用次數(shù):
歷史
  • 收稿日期:2004-10-25
  • 最后修改日期:2004-10-25
  • 錄用日期:
  • 在線發(fā)布日期:
  • 出版日期: