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鈦合金中TiC晶體的生長基元及平衡形態(tài)
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TG146.23

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黑龍江省普通高校骨下教師創(chuàng)新能力資助項(xiàng)目(1053G041)


Study of Growth Units and Equilibrium Morphology of TiC Crystal in Titanium Alloy
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    摘要:

    運(yùn)用負(fù)離子配位多面體生長基元理論,對(duì)鈦合金中自由生長的TiC晶體的生長基元及平衡形態(tài)進(jìn)行了研究。根據(jù)TiC晶體結(jié)構(gòu)特點(diǎn)及Ti晶體d軌道能級(jí)分裂、晶體鍵合軌道等角度分析研究,并通過TiC晶體中形成不同生長基元時(shí)可能釋放的鍵能大小來驗(yàn)證等手段,分析和推斷出TiC晶體在Ti熔體中自由生長時(shí)生長基元為TiC6。對(duì)TiC6生長基元的堆垛方式的研究表明TiC晶體的平衡形態(tài)應(yīng)為八面體。在實(shí)際試樣制備過程中,由于存在較大的過冷度和溶質(zhì)分布的不均勻性,TiC晶體可能形成各種不同的形態(tài)。浮區(qū)定向凝固實(shí)驗(yàn)結(jié)果證明上述分析結(jié)果是正確的。

    Abstract:

    By means of growth unit of anion coordination polyhedron theory, growth units and equilibrium morphology of TiC Crystal which grew freely in titanium alloy were investigated. On the basis of the research on the characteristics of TiC crystal structure, energy level fission of orbit and bonding orbit of Ti crystal, through verifying the bonding energy released when TiC crystal formed different growth units, it can be concluded that the growth unit of TiC crystal which freely grew in molten titanium is TIC6. According to the stacking mode of the TiC6 crystal growth unit, the equilibrium morphology of TiC crystal is octahedron. However during the actual sample preparation, because of the undercooling and inhomogeneity of the solute distribution, TiC crystal may have different morphologies. Those conclusions are proved by the results of unidirectional solidification experiments in floating zone

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金云學(xué) 劉夙偉.鈦合金中TiC晶體的生長基元及平衡形態(tài)[J].稀有金屬材料與工程,2005,34(10):1532~1536.[Jin Yinxue, Liu Suwei (. Jiangsu University of Science. Study of Growth Units and Equilibrium Morphology of TiC Crystal in Titanium Alloy[J]. Rare Metal Materials and Engineering,2005,34(10):1532~1536.]
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  • 收稿日期:2004-05-31
  • 最后修改日期:2005-07-16
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