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熱壁化學(xué)氣相沉積Si基GaN晶體膜的研究
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TN304

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國(guó)家自然科學(xué)基金重大研究計(jì)劃(90201025)，國(guó)家自然科學(xué)基金(60071006)資助項(xiàng)目


The Investigation of GaN Films Grown on Si Substrates by Hot-Wall Chemical Vapor Deposition
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    摘要:

    采用熱壁化學(xué)氣相沉積工藝在Si(111)襯底上生長(zhǎng)GaN晶體膜，并對(duì)其生長(zhǎng)條件進(jìn)行研究。用X射線衍射(XRD)、掃描電鏡(SEM)、熒光光譜(PL)對(duì)樣品進(jìn)行結(jié)構(gòu)、形貌和發(fā)光特性的分析。測(cè)試結(jié)果表明：用此方法得到了六方纖鋅礦結(jié)構(gòu)的GaN晶體膜。實(shí)驗(yàn)結(jié)果顯示：采用該工藝制備GaN晶體膜時(shí)，選擇H2作反應(yīng)氣體兼載體，對(duì)GaN膜的形成起著非常有利的作用。

    Abstract:

    GaN films on Si substrates were obtained by hot-wall chemical vapor deposition and the growth condition during the process was investigated. The structure, surface morphology and the optical properties were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL). It indicated that hexagonal wurtzite GaN films were obtained on Si substrates. Preliminary results suggest that H2 as carrier gas play an important role at the same temperature in the growth of GaN films.

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曹文田 孫振翠 魏芹芹 薛成山 孫海波.熱壁化學(xué)氣相沉積Si基GaN晶體膜的研究[J].稀有金屬材料與工程,2004,33(11):1226~1228.[Cao Wentian, Sun Zhencui, Wei Qinqin, Xue Chengshan, Sun Haibo. The Investigation of GaN Films Grown on Si Substrates by Hot-Wall Chemical Vapor Deposition[J]. Rare Metal Materials and Engineering,2004,33(11):1226~1228.]
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  • 最后修改日期:2003-03-21
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