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Si（111）襯底上生長(zhǎng)GaN晶環(huán)的研究
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TN304.12

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Supported by National Foundation of Natural Science (90201025, 60071006)


Formation of Gallium Nitride Crystal Loops on Silicon (111) Substrate
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    摘要:

    利用熱壁化學(xué)氣相沉積在Si(111)襯底上獲得GaN晶環(huán)，采用掃描電鏡(SEM)、選擇區(qū)電子衍射(SAED)、X射線衍射(XRD)，光致發(fā)光(PL)譜和傅里葉紅外吸收譜(FTIR)對(duì)晶環(huán)的組成、結(jié)構(gòu)、形貌和光學(xué)特性進(jìn)行分析。初步結(jié)果證明：在Si(111)襯底上獲得擇優(yōu)生長(zhǎng)的六方纖鋅礦結(jié)構(gòu)的GaN晶環(huán)。SEM顯示在均勻的薄膜上出現(xiàn)直徑約為10μm的5品環(huán)，由XRD和SAED的分析證實(shí)晶環(huán)呈六方纖礦多晶結(jié)構(gòu)，F(xiàn)TIR顯示GaN薄膜的主要成分為GaN，同時(shí)含有少量的C污染，PL測(cè)試表明晶環(huán)呈現(xiàn)不同于GaN薄膜的發(fā)光特性。

    Abstract:

    The crystal loops of Gallium nitride (GaN) were deposited on silicon (111) substrate by using hot-wall chemical vapor deposition and thermal treatment. Scanning electron microscopy (SEM), selected area electron diffraction (SAED), x-ray diffraction (XRD), photoluminescence (PL) and Fourier Transform Infrared transmission (FTIR) Spectroscopy were employed to analyze the surface morphology, structure and optical properties of GaN layer. SEM image shows five half-loops attached to a crystal string side by side in the uniform films. XRD, SAED patterns reveal that the formed loops are polycrystalline hexagonal gallium nitride. FTIR pattern shows the main composition of the film is GaN and it contains trifle carbon contamination. New feature is found in PL pattern of the crystal loops, which is different from the bulk GaN films.

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王顯明 孫振翠 魏芹芹 王強(qiáng) 曹文田 薛成山. Si（111）襯底上生長(zhǎng)GaN晶環(huán)的研究[J].稀有金屬材料與工程,2004,33(11):1161~1164.[Wang Xianming, Sun Zhencui, Wei Qinqin, Wang Qiang, Cao Wentian, Xue Chengshan. Formation of Gallium Nitride Crystal Loops on Silicon (111) Substrate[J]. Rare Metal Materials and Engineering,2004,33(11):1161~1164.]
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