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SmCo/Cr薄膜中Cr底層最佳濺射條件的正交設(shè)計(jì)研究
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教育部高等學(xué)校骨干教師資助計(jì)劃項(xiàng)目,山西省自然科學(xué)基金和湖北省科技攻關(guān)計(jì)劃項(xiàng)目資助(20041032)


Orthogonal Design for the Optimal Deposition of Cr Underlayer for SmCo/Cr Magnetic Films
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    摘要:

    在SmCo/Cr薄膜中,Cr底層的取向結(jié)構(gòu)對(duì)薄膜的磁學(xué)性能有很大的影響。設(shè)計(jì)了4因素3水平的正交實(shí)驗(yàn)L9(3^4),并通過(guò)數(shù)理統(tǒng)計(jì)的方法分析了Cr底層的濺射參數(shù)對(duì)SmCo/Cr薄膜矯頑力的影響。用較少的實(shí)驗(yàn)得到Cr底層的最佳實(shí)驗(yàn)條件:靶基距為4cm,功率為50w,濺射氣壓為0.5Pa,濺射時(shí)間為9min。并發(fā)現(xiàn)了靶基距、功率和濺射氣壓對(duì)薄膜矯頑力的影響較大,其中靶基距是薄膜矯頑力最主要的控制因素。而濺射時(shí)間在所取的水平上對(duì)薄膜矯頑力的影響最小。本實(shí)驗(yàn)設(shè)計(jì)可達(dá)到95%的置信度。

    Abstract:

    The SmCo/Cr films have been prepared with the help of DC magnetron sputtering method. The structure of Cr underlayer depended on several sputtering factors, and directly influenced the coercivity of SmCo/Cr films. The orthogonal design of experiments and mathematical statistical method are considered as the effective methods to optimize sputtering condition of Cr underlayer for high coercivity of SmCo/Cr films. Using the orthogonal design method, the effects of the four factors, such as, the target-substrate distance, the DC power, the sputtering pressure and the sputtering time were simultaneously investigated by only 9 experiments. The optimal condition of Cr underlayer was obtained, that is 4 cm in T-S distace, 50 W in DC power, 0.5 Pa in sputtering pressure, 9 min in sputtering time. The target-substrate distance, the DC power and the sputtering pressure are very important factors for coercivity, on the other hand, the effect of sputtering time is not obvious. It can be proved that our orthogonal design of experiment is of 95% confidence.

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許小紅 段靜芳 王芳 武海順 李震 李佐宜. SmCo/Cr薄膜中Cr底層最佳濺射條件的正交設(shè)計(jì)研究[J].稀有金屬材料與工程,2004,33(10):1033~1036.[Xu Xiaohong, Duan Jingfang, Wang Fang, Wu Haishun, Li Zhen, Li Zuoyi. Orthogonal Design for the Optimal Deposition of Cr Underlayer for SmCo/Cr Magnetic Films[J]. Rare Metal Materials and Engineering,2004,33(10):1033~1036.]
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  • 最后修改日期:2003-04-21
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