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反應(yīng)燒結(jié)MoSi2－SiC復(fù)相材料電阻率的拓?fù)溲芯?/div>
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TG146.4

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The Topological Analysis of the Composite MoSi2-SiC
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    摘要:

    用拓?fù)浞ㄓ?jì)算了不同顯微組織的MoSi2-SiC材料的電阻率，得到的理論推算結(jié)果與實(shí)驗(yàn)值吻合很好。研究結(jié)果表明，提高高電阻率SiC的體積分?jǐn)?shù)和降低MoSi2-SiC分布的連續(xù)性，可提高M(jìn)oSi2-SiC材料整體的電阻率。該方法可用來預(yù)測要得到所需電阻率材料中應(yīng)具有的SiC含量和分布形態(tài)，為確定MoSi2-SiC復(fù)相材料的顯微結(jié)構(gòu)設(shè)計(jì)提供指導(dǎo)。

    Abstract:

    The electrical resistivity of the composite MoSi2 SiC containing various SiC contents was calculated by a topological method. The results of theory and experiment were found to be in good agreement. The researching results indicate that the electrical resisitivity of the bulk composite can be increased by increasing the volume fractions of the higher resistivity SiC phase and reducing continuity of the MoSi2. The approach described may predict the SiC volume fractions and microstructures needed to obtain some desired electrical resistivity, and may provide insights into the final microstructure.

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張小立 呂振林 金志浩.反應(yīng)燒結(jié)MoSi2－SiC復(fù)相材料電阻率的拓?fù)溲芯縖J].稀有金屬材料與工程,2003,(8):604~606.[Zhang Xiaoli, Lu Zhenlin, Jin Zhihao. The Topological Analysis of the Composite MoSi2-SiC[J]. Rare Metal Materials and Engineering,2003,(8):604~606.]
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  • 最后修改日期:2002-11-18
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