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反應濺射制備AlN薄膜中沉積速率的研究
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TG174.444

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教育部骨干教師資助計劃項目，山西省自然科學基金 (2 0 0 110 11)，山西省青年科學基金聯(lián)合資助 (2 0 0 110 15 )


Study on Deposition Rate of AlN Thin Films Using Reactive Magnetron Sputtering
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    摘要:

    通過對淺射過程中輝光放電現(xiàn)象及薄膜沉積速率的研究，發(fā)現(xiàn)隨著氮濃度的增大，靶面上形成一層不穩(wěn)定的AlN層，由于AlN的濺射速率遠小于Al，從而使薄膜的沉積速率顯著下降。同時還研究了其它濺射參數(shù)對薄膜沉積速率的影響。結(jié)果表明：隨靶基距的增大靶功率的減小，不同程度引起沉積速率的下降；隨著濺射氣壓的增大，最初沉積速率不斷增大，當濺射氣壓增大到一定程度時，沉積速率達到最大值，之后隨濺射氣 壓的增大，又不斷減小。

    Abstract:

    By studying the bright discharge phenomenon in the sputtering process and the deposition rate of the AlN films, it was found that an instable AlN layer was formed on the target surface with increasing the N 2 concentration. Since the sputtering rate of AlN target was very lower than that of the Al target, the deposition rate of AlN films was decreased rapidly. At the meantime, the effects of other experimental parameters on the deposition rate have been studied. The results shown that the deposition rate decreased with increasing the distance ( D ) from target to substrate and decreasing target power, whereas the deposition rate reached a extremum with increasing sputtering pressure from 03 Pa to 12 Pa.

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許小紅 武海順 等.反應濺射制備AlN薄膜中沉積速率的研究[J].稀有金屬材料與工程,2002,(3):209~212.[Xu Xiaohong~ ,Wu Haishun~,Zhang Fuqiang~,Zhang Congjie~,Li Zuoyi~. Study on Deposition Rate of AlN Thin Films Using Reactive Magnetron Sputtering[J]. Rare Metal Materials and Engineering,2002,(3):209~212.]
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  • 最后修改日期:2001-03-09
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