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不同工藝制備的鐵電薄膜底電極Pt/Ti
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TN384 O484

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國(guó)家“863”!715-002-0110,國(guó)家自然科學(xué)基金!6973020


Pt/Ti Bottom Electrodes of Ferroelectric Thin Films Fabricated by Electron Beam Evaporating and DC-Sputtering
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    摘要:

    采用高真空電子束蒸與直流濺射在SiO2/Si基底上制備Pt/Ti底電極,對(duì)Pt/Ti在不同熱處理溫度下的結(jié)構(gòu)與形貌進(jìn)行對(duì)比研究。結(jié)果表明;由于采用不同的制備工藝,Pt晶粒在成核與生長(zhǎng)方式上有所不同,導(dǎo)致了Pt薄膜在結(jié)構(gòu)與形貌的差異。

    Abstract:

    The microstructures and morphologies 0f Pt/Ti electrodes produced by ultra-high vacuum (UHV) electron beam evaporating and dc-sputtering at various temperatures have been investigated using X-ray diffraction, scanning electron microscopy and atomicforce microscopy. The results indicate that the microstructures and morphologies of Pt/Ti electrodes are dependent on the variousgrowing modes of Pt/Ti crystal grains. A dense columnar grain structure and texture were observed as a resu1t of electron beam vaporation. UHV electron beam evaporation results in a continuous and stable Pt/Ti film at high temperatures and is reccomended as a bottom electrode processing method for the preparation of ferroelectric thin films with fine properties.

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宋志棠 曾建明.不同工藝制備的鐵電薄膜底電極Pt/Ti[J].稀有金屬材料與工程,1999,(5):305~309.[Song Zhitang, Zeng Jianming, Gao Jianxia, Zhang Miao, Ling Chenglu. Pt/Ti Bottom Electrodes of Ferroelectric Thin Films Fabricated by Electron Beam Evaporating and DC-Sputtering[J]. Rare Metal Materials and Engineering,1999,(5):305~309.]
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